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BTO-based O-band Sub-Volt CMOS Compatible Plasmonic Racetrack Modulator on Si3N4 (JW4A.59)

Presenter: Dimitrios Chatzitheocharis, Aristotle University of Thessaloniki

We numerically demonstrate a tri-layer CMOS SiN-plasmonic BTO racetrack modulator for the O-band. The device exhibits 3 dB insertion loss, 66.43 GHz resonance 3dB-bandwidth and an extinction ratio higher than 28 dB for 0.5Vpp voltage.

Authors:Dimitrios Chatzitheocharis, Aristotle University of Thessaloniki / Dimitra Ketzaki, Aristotle University of Thessaloniki / Georgios Patsamanis, Aristotle University of Thessaloniki / Konstantinos Vyrsokinos, Aristotle University of Thessaloniki


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